All MOSFET. BUK455-60A Datasheet

 

BUK455-60A MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK455-60A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 41 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TO-220AB

 BUK455-60A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK455-60A Datasheet (PDF)

 0.1. Size:56K  philips
buk455-60a-b 1.pdf

BUK455-60A
BUK455-60A

Philips Semiconductors Product Specification PowerMOS transistor BUK455-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK455 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain current (DC) 41 38 A(SMPS), motor

 0.2. Size:56K  philips
buk455-60a-b.pdf

BUK455-60A
BUK455-60A

Philips Semiconductors Product Specification PowerMOS transistor BUK455-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK455 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain current (DC) 41 38 A(SMPS), motor

 5.1. Size:71K  philips
buk455-60h 1.pdf

BUK455-60A
BUK455-60A

Philips Semiconductors Product specification PowerMOS transistor BUK455-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 43 AAutomotive applications, Switched Ptot Total power dissipation 125 WMod

 5.2. Size:229K  inchange semiconductor
buk455-60.pdf

BUK455-60A
BUK455-60A

isc N-Channel MOSFET Transistor BUK455-60A/BDESCRIPTIONDrain Source Voltage-: V =60V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applicationABSOLUTE MAXIMUM

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