BUZ211 PDF and Equivalents Search

 

BUZ211 Specs and Replacement

Type Designator: BUZ211

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO-3

BUZ211 substitution

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BUZ211 datasheet

 ..1. Size:371K  siemens
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BUZ211

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 ..2. Size:223K  inchange semiconductor
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BUZ211

isc N-Channel Mosfet Transistor BUZ211 FEATURES Static Drain-Source On-Resistance R = 0.8 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,rela... See More ⇒

 9.1. Size:275K  st
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BUZ211

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 9.2. Size:175K  siemens
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BUZ211

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Detailed specifications: BUK445-60A, BUK456-60A, BUK456-60B, 9N90L-TF1, BUK444-200B, BUZ14, BUZ15, BUZ205, AO3400, BUZ330, IRFAC32, JCS24N50WH, JCS24N50ABH, RU6888R3, SPP77N06S2-12, SPB77N06S2-12, TSA20N50M

Keywords - BUZ211 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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