BUZ211 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUZ211
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 125 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 9 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 80 ns
Выходная емкость (Cd): 250 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.8 Ohm
Тип корпуса: TO-3
BUZ211 Datasheet (PDF)
buz210 buz211.pdf
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buz211.pdf
isc N-Channel Mosfet Transistor BUZ211FEATURESStatic Drain-Source On-Resistance: R = 0.8(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,rela
buz21l.pdf
BUZ 21 LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic LevelPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 21 L 100 V 21 A 0.085 TO-220 AB C67078-S1338-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 21Pulsed drain current IDpulsTC = 25 C 84Avalanche current,l
buz215.pdf
BUZ 215SIPMOS Power Transistor N channel Enhancement mode FREDFETPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 215 500 V 5 A 1.5 TO-220 AB C67078-A1400-A2Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 500 VVDGRDrain-gate voltageRGS = 20 k 500Continuous drain current ID ATC = 30 C 5Pulsed drain curre
buz21.pdf
BUZ 21SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 21 100 V 21 A 0.085 TO-220 AB C67078-S1308-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 21Pulsed drain current IDpulsTC = 25 C 84Avalanche current,limited by Tjmax IAR
buz21l.pdf
BUZ 21LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic LevelPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 21 L 100 V 21 A 0.085 TO-220 AB C67078-S1338-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 21Pulsed drain current IDpulsTC = 25 C 84Avalanche current,li
buz210.pdf
PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: BUZ210 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain Source Voltage VDSS 500 Vdc Drain Gate Voltage VDGR 500 Vdc Drain Current Continuo
buz21.pdf
isc N-Channel Mosfet Transistor BUZ21FEATURESStatic Drain-Source On-Resistance: R = 0.1(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay
buz216.pdf
isc N-Channel Mosfet Transistor BUZ216FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc
buz215.pdf
isc N-Channel Mosfet Transistor BUZ215FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc
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