IRFAC32 PDF and Equivalents Search

 ..1. Size:45K  international rectifier
 irfac32.pdf

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 ..2. Size:207K  inchange semiconductor
 irfac32.pdf

isc N-Channel Mosfet Transistor IRFAC32 FEATURES Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Rugged Gate Oxide Technology High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High current ,high speed switching Switch mode power supplies DC-AC converters for welding equip... See More ⇒

 8.1. Size:153K  international rectifier
 irfac30.pdf

PD -90513 REPETITIVE AVALANCHE AND dv/dt RATED IRFAC30 600V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAC30 600V 2.2 3.6 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design... See More ⇒

 8.2. Size:209K  inchange semiconductor
 irfac30.pdf

isc N-Channel Mosfet Transistor IRFAC30 FEATURES Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Rugged Gate Oxide Technology High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High current ,high speed switching Switch mode power supplies DC-AC converters for welding equip... See More ⇒

 9.1. Size:150K  international rectifier
 irfac40.pdf

PD - 90587 REPETITIVE AVALANCHE AND dv/dt RATED IRFAC40 600V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAC40 600V 1.2 6.2 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art desig... See More ⇒

 9.2. Size:51K  harris semi
 irfac40 irfac42.pdf

IRFAC40, Semiconductor IRFAC42 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, January 1998 N-Channel Power MOSFETs 6.2A and 5.4A, 600V Description rDS(ON) = 1.2 and 1.6 These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power Repetitive Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a Simple ... See More ⇒