IRFAC32 - описание и поиск аналогов

isc N-Channel Mosfet Transistor IRFAC32 FEATURES Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Rugged Gate Oxide Technology High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High current ,high speed switching Switch mode power supplies DC-AC converters for welding equip

PD -90513 REPETITIVE AVALANCHE AND dv/dt RATED IRFAC30 600V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAC30 600V 2.2 3.6 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design

isc N-Channel Mosfet Transistor IRFAC30 FEATURES Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Rugged Gate Oxide Technology High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High current ,high speed switching Switch mode power supplies DC-AC converters for welding equip

PD - 90587 REPETITIVE AVALANCHE AND dv/dt RATED IRFAC40 600V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAC40 600V 1.2 6.2 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art desig

IRFAC40, Semiconductor IRFAC42 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, January 1998 N-Channel Power MOSFETs 6.2A and 5.4A, 600V Description rDS(ON) = 1.2 and 1.6 These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power Repetitive Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a Simple