All MOSFET. JCS24N50WH Datasheet

 

JCS24N50WH Datasheet and Replacement


   Type Designator: JCS24N50WH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 271 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 107 nS
   Cossⓘ - Output Capacitance: 465 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO247
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JCS24N50WH Datasheet (PDF)

 ..1. Size:990K  jilin sino
 jcs24n50wh jcs24n50abh.pdf pdf_icon

JCS24N50WH

N N- CHANNEL MOSFET RJCS24N50H MAIN CHARACTERISTICS Package ID 24 A VDSS 500 V Rdson-max 0.19 @Vgs=10V Qg-typ 81nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 0.1. Size:1012K  jilin sino
 jcs24n50wh-abh.pdf pdf_icon

JCS24N50WH

N lSX:_W:WHe^vfSO{ N- CHANNEL MOSFET RJCS24N50H ;NSpe MAIN CHARACTERISTICS \ Package ID 24 A VDSS 500 V Rdson-max 0.19 @Vgs=10V Qg-typ 81nC APPLICATIONS (u l High efficienc

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History: RFP14N06 | WMM07N65C4 | NP180N04TUJ | APT10021JFLL | SM4186T9RL | SSW65R190S2 | NCE30P12BS

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