JCS24N50WH MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS24N50WH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 271 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 81 nC
trⓘ - Rise Time: 107 nS
Cossⓘ - Output Capacitance: 465 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO247
JCS24N50WH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS24N50WH Datasheet (PDF)
..1. Size:990K jilin sino
jcs24n50wh jcs24n50abh.pdf
jcs24n50wh jcs24n50abh.pdf
N N- CHANNEL MOSFET RJCS24N50H MAIN CHARACTERISTICS Package ID 24 A VDSS 500 V Rdson-max 0.19 @Vgs=10V Qg-typ 81nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
0.1. Size:1012K jilin sino
jcs24n50wh-abh.pdf
jcs24n50wh-abh.pdf
N lSX:_W:WHe^vfSO{ N- CHANNEL MOSFET RJCS24N50H ;NSpe MAIN CHARACTERISTICS \ Package ID 24 A VDSS 500 V Rdson-max 0.19 @Vgs=10V Qg-typ 81nC APPLICATIONS (u l High efficienc
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