All MOSFET. MCD3410 Datasheet

 

MCD3410 Datasheet and Replacement


   Type Designator: MCD3410
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13.6 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
   Package: TO-252
 

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MCD3410 Datasheet (PDF)

 ..1. Size:262K  freescale
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MCD3410

FreescaleIRFR3410/ MCD3410N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features:rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)78 @ VGS = 10V21 Low thermal impedance10092 @ VGS = 4.5V19 Fast switching speedTypical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost conve

Datasheet: SPB77N06S2-12 , TSA20N50M , M7002NND03 , M7002TTD03 , MC3406 , MC3541 , MCD04N60 , MCD04N65 , 12N60 , MS10N60 , MS10N65 , MS10N80 , MS12N60 , MS12N65 , MS13N50 , MS13P21 , MS14N60 .

History: NTGS3441BT1G | TPA60R330M

Keywords - MCD3410 MOSFET datasheet

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