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MS12N65 Specs and Replacement

Type Designator: MS12N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 231 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO-220

MS12N65 substitution

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MS12N65 datasheet

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 ms12n65.pdf pdf_icon

MS12N65

MS12N65 N-Channel Enhancement Mode Power MOSFET Description The MS12N65 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low gate charge ( typical 52n... See More ⇒

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 ms12n60.pdf pdf_icon

MS12N65

MS12N60 N-Channel Enhancement Mode Power MOSFET Description The MS12N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=6600V typically @ Tj=15... See More ⇒

Detailed specifications: MC3541, MCD04N60, MCD04N65, MCD3410, MS10N60, MS10N65, MS10N80, MS12N60, AO3401, MS13N50, MS13P21, MS14N60, MS14P21, MS15N50, MS15N60, MS17N03Q8, MS18N50

Keywords - MS12N65 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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