MS23N36 Datasheet and Replacement
Type Designator: MS23N36
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.2 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: SOT-23
MS23N36 substitution
MS23N36 Datasheet (PDF)
ms23n36.pdf

MS23N36 P-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless tel
ms23n22.pdf

MS23N22 P-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless tel
ms23n26.pdf

MS23N26 P-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless tel
Datasheet: MS15N50 , MS15N60 , MS17N03Q8 , MS18N50 , MS20N04NE , MS20N06 , MS23N22 , MS23N26 , IRLZ44N , MS23P01 , MS23P21 , MS23P25 , MS23P39 , MS34N34 , MS3N80 , MS40N06 , MS44P15 .
History: G1NP02ELL
Keywords - MS23N36 MOSFET datasheet
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MS23N36 lookup
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History: G1NP02ELL



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