MS23N36 - Даташиты. Аналоги. Основные параметры
Наименование производителя: MS23N36
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 1.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 5.2 ns
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm
Тип корпуса: SOT-23
Аналог (замена) для MS23N36
MS23N36 Datasheet (PDF)
ms23n36.pdf

MS23N36 P-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless tel
ms23n22.pdf

MS23N22 P-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless tel
ms23n26.pdf

MS23N26 P-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless tel
Другие MOSFET... MS15N50 , MS15N60 , MS17N03Q8 , MS18N50 , MS20N04NE , MS20N06 , MS23N22 , MS23N26 , AON7506 , MS23P01 , MS23P21 , MS23P25 , MS23P39 , MS34N34 , MS3N80 , MS40N06 , MS44P15 .
History: IPP08CNE8NG | AP3N018EYT | HCD65R830
History: IPP08CNE8NG | AP3N018EYT | HCD65R830



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