All MOSFET. MS23P25 Datasheet

 

MS23P25 Datasheet and Replacement


   Type Designator: MS23P25
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOT-23
 

 MS23P25 substitution

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MS23P25 Datasheet (PDF)

 ..1. Size:369K  bruckewell
ms23p25.pdf pdf_icon

MS23P25

MS23P25 P-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordl

 8.1. Size:218K  bruckewell
ms23p21.pdf pdf_icon

MS23P25

MS23P21 P-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordl

 9.1. Size:348K  bruckewell
ms23p39.pdf pdf_icon

MS23P25

MS23P39P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)57 @ VGS = -4.5V -3.9 Low thermal impedance -3089 @ VGS = -2.5V -3.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (T

 9.2. Size:1740K  bruckewell
ms23p01.pdf pdf_icon

MS23P25

Bruckewell Technology Corp., Ltd. MS23P01 P-Channel 20-V (D-S) MOSFET Key Features: These miniature surface mount MOSFETs utilize a SOT23 Package high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as compute

Datasheet: MS18N50 , MS20N04NE , MS20N06 , MS23N22 , MS23N26 , MS23N36 , MS23P01 , MS23P21 , IRFP450 , MS23P39 , MS34N34 , MS3N80 , MS40N06 , MS44P15 , MS4541C , MS48P25 , MS49P63 .

History: APT10050B2VFRG | TK6A53D | IRFH5300 | WMB060N10LGS | AUIRLR3705Z | IRFPF40 | MS23N36

Keywords - MS23P25 MOSFET datasheet

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