Справочник MOSFET. MS23P25

 

MS23P25 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MS23P25
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 4 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
   Тип корпуса: SOT-23
     - подбор MOSFET транзистора по параметрам

 

MS23P25 Datasheet (PDF)

 ..1. Size:369K  bruckewell
ms23p25.pdfpdf_icon

MS23P25

MS23P25 P-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordl

 8.1. Size:218K  bruckewell
ms23p21.pdfpdf_icon

MS23P25

MS23P21 P-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordl

 9.1. Size:348K  bruckewell
ms23p39.pdfpdf_icon

MS23P25

MS23P39P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)57 @ VGS = -4.5V -3.9 Low thermal impedance -3089 @ VGS = -2.5V -3.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (T

 9.2. Size:1740K  bruckewell
ms23p01.pdfpdf_icon

MS23P25

Bruckewell Technology Corp., Ltd. MS23P01 P-Channel 20-V (D-S) MOSFET Key Features: These miniature surface mount MOSFETs utilize a SOT23 Package high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as compute

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HUF76633P3 | FQB7N30TM | 2SK3572-Z | IXFX24N100Q3 | MTM40N20 | IRHLUC770Z4 | OSG65R380FEF-NB

 

 
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