MS4N60 Datasheet and Replacement. Cross Reference Search

MS4N60 Datasheet (PDF)

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MS4N60 N-Channel Enhancement Mode Power MOSFET Description The MS4N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=650V typically @ Tj=150

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HV MOSFET DIE SPECIFICATION Product Name: BW-MS4N60C Chip Features Front side Back side Chip Size (um) Thickness (um) Pad Size-Gate (um) Pad Size-Source (um) 3,180 * 2,720 350 420 * 520 900 * 1900 Referenced PKG Electrical Ratings TC = 25Cunless otherwise noted Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain to Source Voltage 600 V VGS Gate to Source Vol

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Bruckewell Technology Corp., Ltd. http://www.bruckewell-semi.com Product Specification N-Channel Enhancement Mode Power MOSFET MS4N65 Description The MS4N65 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred

Datasheet: MS23P39 , MS34N34 , MS3N80 , MS40N06 , MS44P15 , MS4541C , MS48P25 , MS49P63 , P0903BDG , MS4N60C , MS4N65 , MS50N06 , MS5N50 , MS5N50-A , MS5N60 , MS60P02NE , MS69N68 .