All MOSFET. MS5N50 Datasheet

 

MS5N50 Datasheet and Replacement


   Type Designator: MS5N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-220
 

 MS5N50 substitution

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MS5N50 Datasheet (PDF)

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MS5N50

MS5N50 N-Channel Enhancement Mode Power MOSFET Description The MS5N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=550V typically @ Tj=150

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MS5N50

MS5N50-A N-Channel Enhancement Mode Power MOSFET Description The MS5N50-A is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=550V typically @ Tj=1

Datasheet: MS44P15 , MS4541C , MS48P25 , MS49P63 , MS4N60 , MS4N60C , MS4N65 , MS50N06 , SKD502T , MS5N50-A , MS5N60 , MS60P02NE , MS69N68 , MS6N40 , MS6N80 , MS6N90 , MS6N95 .

History: FQB5N50CTM

Keywords - MS5N50 MOSFET datasheet

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