MS6N95 Datasheet and Replacement
Type Designator: MS6N95
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 950 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO-220
MS6N95 Datasheet (PDF)
ms6n95.pdf

MS6N95 950V N-Channel MOSFET Description The MS6N95 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features RDS(on) (Max 2.4 )@VGS=10V Gate Charge
ms6n90.pdf

MS6N90 900V N-Channel MOSFET Description The MS6N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features RDS(on) (Max 2.4 )@VGS=10V Gate Charge (
Datasheet: MS5N50 , MS5N50-A , MS5N60 , MS60P02NE , MS69N68 , MS6N40 , MS6N80 , MS6N90 , AON6380 , MS70N03 , MS74N52 , MS74N62 , MS75N075 , MS75N75 , MS7N60 , MS7N80 , MS85N06 .
History: MTP15N15
Keywords - MS6N95 MOSFET datasheet
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History: MTP15N15



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