MS6N95 MOSFET Datasheet: N-Ch, 950V, 6A. Full specification with pinout and replacement list

MS6N95 Specs and Replacement

   Type Designator: MS6N95
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 950 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO-220

MS6N95 substitution

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MS6N95 datasheet

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MS6N95 950V N-Channel MOSFET Description The MS6N95 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features RDS(on) (Max 2.4 )@VGS=10V Gate Charge ... See More ⇒

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MS6N90 900V N-Channel MOSFET Description The MS6N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features RDS(on) (Max 2.4 )@VGS=10V Gate Charge (... See More ⇒

Detailed specifications: MS5N50 , MS5N50-A , MS5N60 , MS60P02NE , MS69N68 , MS6N40 , MS6N80 , MS6N90 , IRFZ24N , MS70N03 , MS74N52 , MS74N62 , MS75N075 , MS75N75 , MS7N60 , MS7N80 , MS85N06 .