All MOSFET. MS9N20E Datasheet

 

MS9N20E Datasheet and Replacement


   Type Designator: MS9N20E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.3 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: DFN2X56PP
 

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MS9N20E Datasheet (PDF)

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MS9N20E

Bruckewell Technology Corp., Ltd. DFN 2X5 6PP MS9N20E Dual N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS (on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers,

Datasheet: MS75N075 , MS75N75 , MS7N60 , MS7N80 , MS85N06 , MS8N50 , MS8N60 , MS99N45 , IRF830 , MS9N90 , MSA4P21 , MSAER12N50A , MSAER30N20A , MSAER38N10A , MSAER57N10A , MSAEZ50N10A , MSAFR12N50A .

History: MSAER30N20A | PSMN4R2-60PL | AP8N3R5CMT | YJL2304A | PSMN4R5-40BS | YJL2305B

Keywords - MS9N20E MOSFET datasheet

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