All MOSFET. MS9N20E Datasheet

 

MS9N20E MOSFET. Datasheet pdf. Equivalent


   Type Designator: MS9N20E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.2 nC
   trⓘ - Rise Time: 2.3 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: DFN2X56PP

 MS9N20E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MS9N20E Datasheet (PDF)

 ..1. Size:1175K  bruckewell
 ms9n20e.pdf

MS9N20E MS9N20E

Bruckewell Technology Corp., Ltd. DFN 2X5 6PP MS9N20E Dual N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS (on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers,

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXFX220N15P

 

 
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