MS9N20E Specs and Replacement
Type Designator: MS9N20E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.3 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: DFN2X56PP
MS9N20E substitution
- MOSFET ⓘ Cross-Reference Search
MS9N20E datasheet
ms9n20e.pdf
Bruckewell Technology Corp., Ltd. DFN 2X5 6PP MS9N20E Dual N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS (on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, ... See More ⇒
Detailed specifications: MS75N075, MS75N75, MS7N60, MS7N80, MS85N06, MS8N50, MS8N60, MS99N45, IRF830, MS9N90, MSA4P21, MSAER12N50A, MSAER30N20A, MSAER38N10A, MSAER57N10A, MSAEZ50N10A, MSAFR12N50A
Keywords - MS9N20E MOSFET specs
MS9N20E cross reference
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MS9N20E substitution
MS9N20E replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: AOB12N50
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