All MOSFET. MSAER57N10A Datasheet

 

MSAER57N10A MOSFET. Datasheet pdf. Equivalent


   Type Designator: MSAER57N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 57 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 115 nC
   trⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 1150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-276AB

 MSAER57N10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MSAER57N10A Datasheet (PDF)

 ..1. Size:154K  microsemi
msaer57n10a.pdf

MSAER57N10A
MSAER57N10A

2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAER57N10AFeatures 100 Volts MOSKEYTM - Mosfet and Schottky in a single package 57 Amps Ultra Low On-Resistance 175C Operating Temperature 25 m Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package N-CHANNEL

 9.1. Size:44K  microsemi
msaer12n50a msafr12n50a.pdf

MSAER57N10A
MSAER57N10A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220 MSAER12N50AFAX: (714) 966-5256MSAFR12N50AFeatures500 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only)12 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability400 m Hermetically sealed, surface mount power package Low p

 9.2. Size:42K  microsemi
msaer30n20a msafr30n20a.pdf

MSAER57N10A
MSAER57N10A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220 MSAER30N20AFAX: (714) 966-5256MSAFR30N20AFeatures200 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only)30 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability85 m Hermetically sealed, surface mount power package Low pa

 9.3. Size:34K  microsemi
38n10a msaer38n10a msafr38n10a.pdf

MSAER57N10A
MSAER57N10A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220 MSAER38N10AFAX: (714) 966-5256MSAFR38N10AFeatures100 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only)38 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability55 m Hermetically sealed, surface mount power package Low pa

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AUIRFP4468

 

 
Back to Top