MSAER57N10A - аналоги, параметры транзистора - Справочник транзисторов

MSAER57N10A даташит

..1. Size:154K microsemi
msaer57n10a.pdf pdf_icon

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAER57N10A Features 100 Volts MOSKEYTM - Mosfet and Schottky in a single package 57 Amps Ultra Low On-Resistance 175 C Operating Temperature 25 m Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package N-CHANNEL

9.1. Size:44K microsemi
msaer12n50a msafr12n50a.pdf pdf_icon

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAER12N50A FAX (714) 966-5256 MSAFR12N50A Features 500 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only) 12 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 400 m Hermetically sealed, surface mount power package Low p

9.2. Size:42K microsemi
msaer30n20a msafr30n20a.pdf pdf_icon

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAER30N20A FAX (714) 966-5256 MSAFR30N20A Features 200 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only) 30 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 85 m Hermetically sealed, surface mount power package Low pa

9.3. Size:34K microsemi
38n10a msaer38n10a msafr38n10a.pdf pdf_icon

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAER38N10A FAX (714) 966-5256 MSAFR38N10A Features 100 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only) 38 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 55 m Hermetically sealed, surface mount power package Low pa

Другие MOSFET... MS8N60 , MS99N45 , MS9N20E , MS9N90 , MSA4P21 , MSAER12N50A , MSAER30N20A , MSAER38N10A , EMB04N03H , MSAEZ50N10A , MSAFR12N50A , MSAFR30N20A , MSAFR38N10A , MSAFX10N90A , MSAFX11P50A , MSAFX20N60A , MSAFX75N10A .