All MOSFET. MSAFX20N60A Datasheet

 

MSAFX20N60A Datasheet and Replacement


   Type Designator: MSAFX20N60A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 150 nC
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO-276AB
 

 MSAFX20N60A substitution

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MSAFX20N60A Datasheet (PDF)

 ..1. Size:34K  microsemi
 20n60a msafx20n60a.pdf pdf_icon

MSAFX20N60A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAFX20N60AFeatures600 Volts Ultrafast body diode 20 Amps Rugged polysilicon gate cell structure350 m Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductanceN-CHANNEL Very low thermal resistance

 9.1. Size:33K  microsemi
 msafx76n07a.pdf pdf_icon

MSAFX20N60A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAFX76N07AFeatures70 Volts Ultrafast body diode76 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability12 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistanceN-CHANNEL

 9.2. Size:37K  microsemi
 10n90a msafx10n90a.pdf pdf_icon

MSAFX20N60A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256 MSAFX10N90AFeatures900 Volts Ultrafast body diode10 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability1.1 Hermetically sealed, surface mount power package Low package inductance Very low thermal resistanceN-CHANNEL Rev

 9.3. Size:34K  microsemi
 msafx75n10a.pdf pdf_icon

MSAFX20N60A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAFX75N10AFeatures100 Volts Ultrafast body diode75 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability20 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistanceN-CHANNEL

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Keywords - MSAFX20N60A MOSFET datasheet

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