MSAFX75N10A PDF and Equivalents Search

 

MSAFX75N10A Specs and Replacement

Type Designator: MSAFX75N10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 1600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO-276AB

MSAFX75N10A substitution

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MSAFX75N10A datasheet

 ..1. Size:34K  microsemi
 msafx75n10a.pdf pdf_icon

MSAFX75N10A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX75N10A Features 100 Volts Ultrafast body diode 75 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 20 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance N-CHANNEL... See More ⇒

 8.1. Size:33K  microsemi
 msafx76n07a.pdf pdf_icon

MSAFX75N10A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX76N07A Features 70 Volts Ultrafast body diode 76 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 12 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance N-CHANNEL ... See More ⇒

 9.1. Size:37K  microsemi
 10n90a msafx10n90a.pdf pdf_icon

MSAFX75N10A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX10N90A Features 900 Volts Ultrafast body diode 10 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 1.1 Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance N-CHANNEL Rev... See More ⇒

 9.2. Size:34K  microsemi
 20n60a msafx20n60a.pdf pdf_icon

MSAFX75N10A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX20N60A Features 600 Volts Ultrafast body diode 20 Amps Rugged polysilicon gate cell structure 350 m Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance N-CHANNEL Very low thermal resistance... See More ⇒

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Detailed specifications: MSAER57N10A, MSAEZ50N10A, MSAFR12N50A, MSAFR30N20A, MSAFR38N10A, MSAFX10N90A, MSAFX11P50A, MSAFX20N60A, IRF730, MSAFZ50N10A, MSB15N60, MSB22A04Q8, MSB55N03N3, MSC22N03, MSC37N03, MTC1421G6, MTC4503LQ8

Keywords - MSAFX75N10A MOSFET specs

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 MSAFX75N10A substitution

 MSAFX75N10A replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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