MTD20P06HDLT4
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTD20P06HDLT4
Marking Code: 20P06HL
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 72
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 20.6
nC
trⓘ - Rise Time: 175
nS
Cossⓘ -
Output Capacitance: 210
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.175
Ohm
Package:
DPAK
MTD20P06HDLT4
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTD20P06HDLT4
Datasheet (PDF)
..1. Size:86K onsemi
mtd20p06hdlt4.pdf
MTD20P06HDLPreferred DevicePower MOSFET20 Amps, 60 Volts, LogicLevelP-Channel DPAKhttp://onsemi.comThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsooffers a drain-to-source diode with a fast recovery time. Designed for20 AMPERES, 60 VOLTSlow-voltage, high-speed switching applications in power supp
3.1. Size:265K motorola
mtd20p06hdl.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P06HDL/DDesigner's Data SheetMTD20P06HDLHDTMOS E-FETMotorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate15 AMPERES60 VOLTSThis advanced highcell density HDTMOS EFET is designed toRDS(on) = 175 Mwithst
4.1. Size:308K motorola
mtd20p06hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P06HDL/DDesigner's Data SheetMTD20P06HDLHDTMOS E-FETMotorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate15 AMPERES60 VOLTSThis advanced highcell density HDTMOS EFET is designed toRDS(on) = 175 Mwithst
7.1. Size:244K motorola
mtd20p03hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P03HDL/DDesigner's Data SheetMTD20P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate19 AMPERES30 VOLTS This advanced HDTMOS power FET is designed to withstandRDS(on) = 0.099 OHMhigh energy
7.2. Size:215K motorola
mtd20p03hdl.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P03HDL/DDesigner's Data SheetMTD20P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate19 AMPERES30 VOLTS This advanced HDTMOS power FET is designed to withstandRDS(on) = 0.099 OHMhigh energy
7.3. Size:177K onsemi
mtd20p03hdlt4.pdf
MTD20P03HDLPreferred DevicePower MOSFET20 Amps, 30 Volts, Logic LevelP-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. This energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,V(BR)DSS RDS(on
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History: CEP540N