MTD20P06HDLT4 Specs and Replacement
Type Designator: MTD20P06HDLT4
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 72 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 175 nS
Cossⓘ - Output Capacitance: 210 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
Package: DPAK
MTD20P06HDLT4 substitution
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MTD20P06HDLT4 datasheet
mtd20p06hdlt4.pdf
MTD20P06HDL Preferred Device Power MOSFET 20 Amps, 60 Volts, Logic Level P-Channel DPAK http //onsemi.com This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for 20 AMPERES, 60 VOLTS low-voltage, high-speed switching applications in power supp... See More ⇒
mtd20p06hdl.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD20P06HDL/D Designer's Data Sheet MTD20P06HDL HDTMOS E-FET Motorola Preferred Device High Density Power FET TMOS POWER FET DPAK for Surface Mount LOGIC LEVEL P Channel Enhancement Mode Silicon Gate 15 AMPERES 60 VOLTS This advanced high cell density HDTMOS E FET is designed to RDS(on) = 175 M withst... See More ⇒
mtd20p06hd.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD20P06HDL/D Designer's Data Sheet MTD20P06HDL HDTMOS E-FET Motorola Preferred Device High Density Power FET TMOS POWER FET DPAK for Surface Mount LOGIC LEVEL P Channel Enhancement Mode Silicon Gate 15 AMPERES 60 VOLTS This advanced high cell density HDTMOS E FET is designed to RDS(on) = 175 M withst... See More ⇒
mtd20p03hd.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD20P03HDL/D Designer's Data Sheet MTD20P03HDL HDTMOS E-FET. Motorola Preferred Device High Density Power FET TMOS POWER FET DPAK for Surface Mount LOGIC LEVEL P Channel Enhancement Mode Silicon Gate 19 AMPERES 30 VOLTS This advanced HDTMOS power FET is designed to withstand RDS(on) = 0.099 OHM high energy... See More ⇒
Detailed specifications: MSC22N03, MSC37N03, MTC1421G6, MTC4503LQ8, MTC5806V8, MTD10N10ELT4, MTD120C10J4, MTD20P03HDLT4, IRLZ44N, MTD2955VT4, MTD5P06VT4, MTD5P06VT4G, MTD6N15T4, MTD6N15T4G, MTD6N15T4GV, MTD6N20ET4, MTD6N20ET4G
Keywords - MTD20P06HDLT4 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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