All MOSFET. MTD20P06HDLT4 Datasheet

 

MTD20P06HDLT4 Datasheet and Replacement


   Type Designator: MTD20P06HDLT4
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 175 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
   Package: DPAK
 

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MTD20P06HDLT4 Datasheet (PDF)

 ..1. Size:86K  onsemi
 mtd20p06hdlt4.pdf pdf_icon

MTD20P06HDLT4

MTD20P06HDLPreferred DevicePower MOSFET20 Amps, 60 Volts, LogicLevelP-Channel DPAKhttp://onsemi.comThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsooffers a drain-to-source diode with a fast recovery time. Designed for20 AMPERES, 60 VOLTSlow-voltage, high-speed switching applications in power supp

 3.1. Size:265K  motorola
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MTD20P06HDLT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P06HDL/DDesigner's Data SheetMTD20P06HDLHDTMOS E-FETMotorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate15 AMPERES60 VOLTSThis advanced highcell density HDTMOS EFET is designed toRDS(on) = 175 Mwithst

 4.1. Size:308K  motorola
 mtd20p06hd.pdf pdf_icon

MTD20P06HDLT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P06HDL/DDesigner's Data SheetMTD20P06HDLHDTMOS E-FETMotorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate15 AMPERES60 VOLTSThis advanced highcell density HDTMOS EFET is designed toRDS(on) = 175 Mwithst

 7.1. Size:244K  motorola
 mtd20p03hd.pdf pdf_icon

MTD20P06HDLT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P03HDL/DDesigner's Data SheetMTD20P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate19 AMPERES30 VOLTS This advanced HDTMOS power FET is designed to withstandRDS(on) = 0.099 OHMhigh energy

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Datasheet: MSC22N03 , MSC37N03 , MTC1421G6 , MTC4503LQ8 , MTC5806V8 , MTD10N10ELT4 , MTD120C10J4 , MTD20P03HDLT4 , IRFP260N , MTD2955VT4 , MTD5P06VT4 , MTD5P06VT4G , MTD6N15T4 , MTD6N15T4G , MTD6N15T4GV , MTD6N20ET4 , MTD6N20ET4G .

History: WSD2090DN56 | MTB06N03Q8 | IRF7303TR | STB55NF06 | IRFR9120 | SJMN380R65F | MTDK3S6R

Keywords - MTD20P06HDLT4 MOSFET datasheet

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