MTD20P06HDLT4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MTD20P06HDLT4
Маркировка: 20P06HL
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 72 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 15 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 15 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 20.6 nC
Время нарастания (tr): 175 ns
Выходная емкость (Cd): 210 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.175 Ohm
Тип корпуса: DPAK
Аналог (замена) для MTD20P06HDLT4
MTD20P06HDLT4 Datasheet (PDF)
mtd20p06hdlt4.pdf
MTD20P06HDLPreferred DevicePower MOSFET20 Amps, 60 Volts, LogicLevelP-Channel DPAKhttp://onsemi.comThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsooffers a drain-to-source diode with a fast recovery time. Designed for20 AMPERES, 60 VOLTSlow-voltage, high-speed switching applications in power supp
mtd20p06hdl.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P06HDL/DDesigner's Data SheetMTD20P06HDLHDTMOS E-FETMotorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate15 AMPERES60 VOLTSThis advanced highcell density HDTMOS EFET is designed toRDS(on) = 175 Mwithst
mtd20p06hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P06HDL/DDesigner's Data SheetMTD20P06HDLHDTMOS E-FETMotorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate15 AMPERES60 VOLTSThis advanced highcell density HDTMOS EFET is designed toRDS(on) = 175 Mwithst
mtd20p03hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P03HDL/DDesigner's Data SheetMTD20P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate19 AMPERES30 VOLTS This advanced HDTMOS power FET is designed to withstandRDS(on) = 0.099 OHMhigh energy
mtd20p03hdl.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P03HDL/DDesigner's Data SheetMTD20P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate19 AMPERES30 VOLTS This advanced HDTMOS power FET is designed to withstandRDS(on) = 0.099 OHMhigh energy
mtd20p03hdlt4.pdf
MTD20P03HDLPreferred DevicePower MOSFET20 Amps, 30 Volts, Logic LevelP-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. This energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,V(BR)DSS RDS(on
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