Справочник MOSFET. MTD20P06HDLT4

 

MTD20P06HDLT4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MTD20P06HDLT4
   Маркировка: 20P06HL
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 72 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 20.6 nC
   trⓘ - Время нарастания: 175 ns
   Cossⓘ - Выходная емкость: 210 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.175 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для MTD20P06HDLT4

 

 

MTD20P06HDLT4 Datasheet (PDF)

 ..1. Size:86K  onsemi
 mtd20p06hdlt4.pdf

MTD20P06HDLT4 MTD20P06HDLT4

MTD20P06HDLPreferred DevicePower MOSFET20 Amps, 60 Volts, LogicLevelP-Channel DPAKhttp://onsemi.comThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsooffers a drain-to-source diode with a fast recovery time. Designed for20 AMPERES, 60 VOLTSlow-voltage, high-speed switching applications in power supp

 3.1. Size:265K  motorola
 mtd20p06hdl.pdf

MTD20P06HDLT4 MTD20P06HDLT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P06HDL/DDesigner's Data SheetMTD20P06HDLHDTMOS E-FETMotorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate15 AMPERES60 VOLTSThis advanced highcell density HDTMOS EFET is designed toRDS(on) = 175 Mwithst

 4.1. Size:308K  motorola
 mtd20p06hd.pdf

MTD20P06HDLT4 MTD20P06HDLT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P06HDL/DDesigner's Data SheetMTD20P06HDLHDTMOS E-FETMotorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate15 AMPERES60 VOLTSThis advanced highcell density HDTMOS EFET is designed toRDS(on) = 175 Mwithst

 7.1. Size:244K  motorola
 mtd20p03hd.pdf

MTD20P06HDLT4 MTD20P06HDLT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P03HDL/DDesigner's Data SheetMTD20P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate19 AMPERES30 VOLTS This advanced HDTMOS power FET is designed to withstandRDS(on) = 0.099 OHMhigh energy

 7.2. Size:215K  motorola
 mtd20p03hdl.pdf

MTD20P06HDLT4 MTD20P06HDLT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD20P03HDL/DDesigner's Data SheetMTD20P03HDLHDTMOS E-FET.Motorola Preferred DeviceHigh Density Power FETTMOS POWER FETDPAK for Surface MountLOGIC LEVELPChannel EnhancementMode Silicon Gate19 AMPERES30 VOLTS This advanced HDTMOS power FET is designed to withstandRDS(on) = 0.099 OHMhigh energy

 7.3. Size:177K  onsemi
 mtd20p03hdlt4.pdf

MTD20P06HDLT4 MTD20P06HDLT4

MTD20P03HDLPreferred DevicePower MOSFET20 Amps, 30 Volts, Logic LevelP-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. This energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,V(BR)DSS RDS(on

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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