MTD20P06HDLT4 - описание и поиск аналогов

MTD20P06HDL Preferred Device Power MOSFET 20 Amps, 60 Volts, Logic Level P-Channel DPAK http //onsemi.com This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for 20 AMPERES, 60 VOLTS low-voltage, high-speed switching applications in power supp

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD20P06HDL/D Designer's Data Sheet MTD20P06HDL HDTMOS E-FET Motorola Preferred Device High Density Power FET TMOS POWER FET DPAK for Surface Mount LOGIC LEVEL P Channel Enhancement Mode Silicon Gate 15 AMPERES 60 VOLTS This advanced high cell density HDTMOS E FET is designed to RDS(on) = 175 M withst

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD20P06HDL/D Designer's Data Sheet MTD20P06HDL HDTMOS E-FET Motorola Preferred Device High Density Power FET TMOS POWER FET DPAK for Surface Mount LOGIC LEVEL P Channel Enhancement Mode Silicon Gate 15 AMPERES 60 VOLTS This advanced high cell density HDTMOS E FET is designed to RDS(on) = 175 M withst

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD20P03HDL/D Designer's Data Sheet MTD20P03HDL HDTMOS E-FET. Motorola Preferred Device High Density Power FET TMOS POWER FET DPAK for Surface Mount LOGIC LEVEL P Channel Enhancement Mode Silicon Gate 19 AMPERES 30 VOLTS This advanced HDTMOS power FET is designed to withstand RDS(on) = 0.099 OHM high energy

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD20P03HDL/D Designer's Data Sheet MTD20P03HDL HDTMOS E-FET. Motorola Preferred Device High Density Power FET TMOS POWER FET DPAK for Surface Mount LOGIC LEVEL P Channel Enhancement Mode Silicon Gate 19 AMPERES 30 VOLTS This advanced HDTMOS power FET is designed to withstand RDS(on) = 0.099 OHM high energy

MTD20P03HDL Preferred Device Power MOSFET 20 Amps, 30 Volts, Logic Level P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, V(BR)DSS RDS(on