MTD6N15T4GV MOSFET Datasheet: N-Ch, 150V, 6A. Full specification with pinout and replacement list

MTD6N15T4GV Specs and Replacement

Type Designator: MTD6N15T4GV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 180 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: DPAK

MTD6N15T4GV substitution

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MTD6N15T4GV datasheet

..1. Size:70K onsemi
mtd6n15-d mtd6n15t4gv mtd6n15t4 mtd6n15t4g.pdf pdf_icon

MTD6N15 Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, http //onsemi.com solenoid and relay drivers. V(BR)DSS RDS(on) MAX ID MAX Features 150 V 0.3 W 6.0 A Silicon Gate for Fast Switching Speeds Low RDS(... See More ⇒

4.1. Size:846K cn vbsemi
mtd6n15t4g.pdf pdf_icon

MTD6N15T4G www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.245 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATIN... See More ⇒

7.1. Size:231K motorola
mtd6n15r.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6N15/D Designer's Data Sheet MTD6N15 Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate TMOS POWER FET This TMOS Power FET is designed for high speed, low loss 6.0 AMPERES power switching applications such as switching regulators, convert- 150 VOLTS ers, solenoid and re... See More ⇒

8.1. Size:211K motorola
mtd6n10e.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6N10E/D Designer's Data Sheet MTD6N10E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 6.0 AMPERES 100 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.400 OHM energy in the avalanche... See More ⇒

Detailed specifications: MTD120C10J4, MTD20P03HDLT4, MTD20P06HDLT4, MTD2955VT4, MTD5P06VT4, MTD5P06VT4G, MTD6N15T4, MTD6N15T4G, IRF3710, MTD6N20ET4, MTD6N20ET4G, MTD6P10E, MTDP9620Q8, MTDP9933KQ8, MTE05N10FP, MTE130N20J3, MTE150P20H8