MTD6N15T4GV - параметры транзистора MOSFET, его аналоги, datasheet

MTD6N15T4GV Datasheet (PDF)

..1. Size:70K onsemi
mtd6n15-d mtd6n15t4gv mtd6n15t4 mtd6n15t4g.pdf pdf_icon

MTD6N15Power Field Effect TransistorDPAK for Surface MountN-Channel Enhancement-Mode Silicon GateThis TMOS Power FET is designed for high speed, low loss powerswitching applications such as switching regulators, converters,http://onsemi.comsolenoid and relay drivers.V(BR)DSS RDS(on) MAX ID MAXFeatures150 V 0.3 W 6.0 A Silicon Gate for Fast Switching Speeds Low RDS(

4.1. Size:846K cn vbsemi
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MTD6N15T4Gwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.245 at VGS = 10 V10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATIN

7.1. Size:231K motorola
mtd6n15r.pdf pdf_icon

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD6N15/DDesigner's Data SheetMTD6N15Power Field Effect TransistorDPAK for Surface MountNChannel EnhancementMode Silicon GateTMOS POWER FETThis TMOS Power FET is designed for high speed, low loss6.0 AMPERESpower switching applications such as switching regulators, convert-150 VOLTSers, solenoid and re

8.1. Size:211K motorola
mtd6n10e.pdf pdf_icon

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD6N10E/DDesigner's Data SheetMTD6N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 6.0 AMPERES 100 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.400 OHMenergy in the avalanche

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