All MOSFET. IPB35CN10N Datasheet

 

IPB35CN10N Datasheet and Replacement


   Type Designator: IPB35CN10N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 58 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO263
 

 IPB35CN10N substitution

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IPB35CN10N Datasheet (PDF)

 0.1. Size:704K  infineon
 ipb35cn10n-g ipd33cn10n-g ipi35cn10n-g ipp35cn10n-g ipu33cn10n-g.pdf pdf_icon

IPB35CN10N

IPB35CN10N G IPD33CN10N GIPI35CN10N G IPP35CN10N G IPU33CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 34mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 27 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

 9.1. Size:171K  infineon
 ipb35n10s3l-26.pdf pdf_icon

IPB35CN10N

IPB35N10S3L-26OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR 26.3mWDS(on),maxI 35 ADFeaturesPG-TO263-3-2 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB35N10S3L-26 PG-TO263-3-2 3N10L26M

Datasheet: MTE55N20J3 , MTE6D5N12B0E3 , MTE8D0N08H8 , MTG9N50E , MTH13N45 , MTH13N50 , MTH15N35 , IPU25CN10N , IRFP260 , IPU33CN10N , IPB80CN10N , IPU78CN10N , MTH15N40 , MTH20N15 , MTH5N100 , MTH5N95 , MTH6N100 .

History: IPU78CN10N

Keywords - IPB35CN10N MOSFET datasheet

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