IPU33CN10N PDF and Equivalents Search

 

IPU33CN10N Specs and Replacement

Type Designator: IPU33CN10N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 58 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm

Package: DPAK TO251

IPU33CN10N substitution

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IPU33CN10N datasheet

 0.1. Size:704K  infineon
 ipb35cn10n-g ipd33cn10n-g ipi35cn10n-g ipp35cn10n-g ipu33cn10n-g.pdf pdf_icon

IPU33CN10N

IPB35CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G IPU33CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 34 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 27 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi... See More ⇒

Detailed specifications: MTE6D5N12B0E3, MTE8D0N08H8, MTG9N50E, MTH13N45, MTH13N50, MTH15N35, IPU25CN10N, IPB35CN10N, K3569, IPB80CN10N, IPU78CN10N, MTH15N40, MTH20N15, MTH5N100, MTH5N95, MTH6N100, MTH6N100E

Keywords - IPU33CN10N MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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