All MOSFET. IPU33CN10N Datasheet

 

IPU33CN10N Datasheet and Replacement


   Type Designator: IPU33CN10N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 58 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: DPAK TO251
 

 IPU33CN10N substitution

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IPU33CN10N Datasheet (PDF)

 0.1. Size:704K  infineon
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IPU33CN10N

IPB35CN10N G IPD33CN10N GIPI35CN10N G IPP35CN10N G IPU33CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 34mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 27 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

Datasheet: MTE6D5N12B0E3 , MTE8D0N08H8 , MTG9N50E , MTH13N45 , MTH13N50 , MTH15N35 , IPU25CN10N , IPB35CN10N , SPP20N60C3 , IPB80CN10N , IPU78CN10N , MTH15N40 , MTH20N15 , MTH5N100 , MTH5N95 , MTH6N100 , MTH6N100E .

History: IPI60R099CP | RUF015N02TL | KTK211 | TK19A50W | IRFP151FI | SI4914BDY | UPA2561T1H

Keywords - IPU33CN10N MOSFET datasheet

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