MTM10N100E Specs and Replacement
Type Designator: MTM10N100E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-204AE
MTM10N100E substitution
- MOSFET ⓘ Cross-Reference Search
MTM10N100E datasheet
Detailed specifications: MTH6N100E, MTH6N55, MTH6N60, MTH8N35, MTH8N40, MTH8N55, MTH8N60, MTH8N90, AON7506, MTM10N25, MTM12N10, MTM12P05, MTM12P06, MTM12P08, MTM12P10, MTM13123, MTM13127
Keywords - MTM10N100E MOSFET specs
MTM10N100E cross reference
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MTM10N100E replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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