MTM13123 MOSFET. Datasheet pdf. Equivalent
Type Designator: MTM13123
Marking Code: BL
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 95 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
Package: TO-236AA SOT-23
MTM13123 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTM13123 Datasheet (PDF)
mtm13123.pdf
Doc No. TT4-EA-14584Revision. 2Product StandardsMOS FETMTM131230BBFMTM131230BBFSilicon P-channel MOSFETUnit : mm 2.9For switching0.4 0.163 Features Low drain-source ON resistance : RDS(on)typ. = 40 m ( VGS = -4.0 V ) Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)1 21.1 Marking Symbol:BL(0.95)(0.95)1.91. Gate
mtm13127.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MTM13127Silicon P-channel MOS FETFor DC-DC converter circuitsFor swiching circuits Overview PackageMTM13127 is the P-channel MOS FET that is highly suitable ofr DC-DC Codeconverter and other switching circuits. Mini3-G3-BPackage dimension clicks here. Click! Features Low drain
mtm13227.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MTM13227Silicon N-channel MOSFETFor switching Features Package Low on-resistance: Ron = 85 mW (VGS = -4.0 V) Code Small package: Mini3-G3-B Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Eco-friendly Halogen-free package 1: Gate Packaging
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SSW80R180S2
History: SSW80R180S2
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