MTM13227 Datasheet and Replacement
Type Designator: MTM13227
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 26 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: SOT-346
MTM13227 substitution
MTM13227 Datasheet (PDF)
mtm13227.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).MTM13227Silicon N-channel MOSFETFor switching Features Package Low on-resistance: Ron = 85 mW (VGS = -4.0 V) Code Small package: Mini3-G3-B Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Eco-friendly Halogen-free package 1: Gate Packaging
mtm13127.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).MTM13127Silicon P-channel MOS FETFor DC-DC converter circuitsFor swiching circuits Overview PackageMTM13127 is the P-channel MOS FET that is highly suitable ofr DC-DC Codeconverter and other switching circuits. Mini3-G3-BPackage dimension clicks here. Click! Features Low drain
mtm13123.pdf

Doc No. TT4-EA-14584Revision. 2Product StandardsMOS FETMTM131230BBFMTM131230BBFSilicon P-channel MOSFETUnit : mm 2.9For switching0.4 0.163 Features Low drain-source ON resistance : RDS(on)typ. = 40 m ( VGS = -4.0 V ) Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)1 21.1 Marking Symbol:BL(0.95)(0.95)1.91. Gate
Datasheet: MTM10N25 , MTM12N10 , MTM12P05 , MTM12P06 , MTM12P08 , MTM12P10 , MTM13123 , MTM13127 , 5N65 , MTM15N20 , MTM15N35 , MTM15N40 , MTM15N40E , MTM15N45 , MTM15N50 , MTM20N15 , MTM20P10 .
History: FQB13N06TM | IXFN32N120P | IRHY597130CM | UPA2735GR | JCS6N90B | IRLR2905ZTR | SPE65R360G
Keywords - MTM13227 MOSFET datasheet
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History: FQB13N06TM | IXFN32N120P | IRHY597130CM | UPA2735GR | JCS6N90B | IRLR2905ZTR | SPE65R360G



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