MTM232270LBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTM232270LBF
Marking Code: ET
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 26
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11
Ohm
Package:
SOT-323
MTM232270LBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTM232270LBF
Datasheet (PDF)
..1. Size:357K panasonic
mtm232270lbf.pdf
Doc No. TT4-EA-13115Revision. 2Product StandardsMOS FETMTM232270LBFMTM232270LBFSilicon N-channel MOS FETUnit : mm For switching2.0MTM13227 in SMini3 type package0.3 0.153 Features Low drain-source On-state resistance : RDS(on) typ = 85 m (VGS = 4.0 V) Low drive voltage: 2.5 V driveHalogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 c
6.1. Size:439K panasonic
mtm23227.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MTM23227Silicon N-channel MOSFETFor switching Overview PackageMTM23227 is the l N-channel MOS FET that is highly suitable ofr DC-DC Codeconverter and other switching circuits. SMini3-G1-B Pin Name Features 1: Gate 2: Source Realization of low on-resistance, using extremely fine process (4.6 mW
7.1. Size:492K panasonic
mtm232230lbf.pdf
Doc No. TT4-EA-12901Revision. 3MOS FETMTM232230LBFMTM232230LBFNMOS FETUnit : mm 2.00.3 0.153 RDS(on) typ = 20 m (VGS = 4.0 V) 2.5 V (EU RoHS / UL-94
7.2. Size:431K panasonic
mtm23223.pdf
MTM23223Silicon N-channel MOSFETFor switching Overview PackageMTM23223 is N-channel MOS FET for load switch circuits. Code SMini3-G1-B Pin Name Features 1: Gate Low voltage drive (2.5 V, 4 V) 2: Source Realization of low on-resistance, using extremely fine process 3: Drain Contributes to miniaturization of sets, reduction of component count.
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