MTM55N10 Specs and Replacement
Type Designator: MTM55N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 350 nS
Cossⓘ - Output Capacitance: 2500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO-204AE
MTM55N10 substitution
MTM55N10 datasheet
Detailed specifications: MTM2N90 , MTM30N50 , MTM3N60 , MTM40N20 , MTM45N15 , MTM4N45 , MTM4N50 , MTM55N08 , EMB04N03H , MTM5N100 , MTM5N35 , MTM5N40 , MTM5N95 , MTM60N05 , MTM60N06 , MTM68410 , MTM68411 .
History: HUFA76443P3 | IPI50R399CP
Keywords - MTM55N10 MOSFET specs
MTM55N10 cross reference
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MTM55N10 substitution
MTM55N10 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: HUFA76443P3 | IPI50R399CP
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