MTM68410 Datasheet and Replacement
Type Designator: MTM68410
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: WMINI8-F1
MTM68410 substitution
MTM68410 Datasheet (PDF)
mtm68410.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).MTM68410Silicon P-channel MOS FETFor load switch circuitsFor switching circuits Package Overview CodeMTM68410 is the low ON resistance dual P-channel MOS FET designed for WMini8-F1load switch circuits.Package dimension clicks here. Click! Features Pin Name Dual P-channel MOS FET in o
mtm68411.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).MTM68411Silicon P-channel MOS FETFor load switch circuitsFor switching circuits Package Overview CodeMTM68411 is the low ON resistance dual P-channel MOS FET designed for WMini8-F1load switch circuits.Package dimension clicks here. Click! Features Pin Name Dual P-channel MOS FET in o
Datasheet: MTM55N08 , MTM55N10 , MTM5N100 , MTM5N35 , MTM5N40 , MTM5N95 , MTM60N05 , MTM60N06 , IRFP064N , MTM68411 , MTM6N60 , MTM6N90 , MTM76110 , MTM76111 , MTM76123 , MTM76320 , MTM76325 .
History: HYG023N03LR1U | 18N20
Keywords - MTM68410 MOSFET datasheet
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History: HYG023N03LR1U | 18N20



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