MTM6N60 Specs and Replacement
Type Designator: MTM6N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 350 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-204AA
MTM6N60 substitution
- MOSFET ⓘ Cross-Reference Search
MTM6N60 datasheet
mtm6n90.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM6N90(MTM6N90) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power ... See More ⇒
Detailed specifications: MTM5N100, MTM5N35, MTM5N40, MTM5N95, MTM60N05, MTM60N06, MTM68410, MTM68411, IRFZ44N, MTM6N90, MTM76110, MTM76111, MTM76123, MTM76320, MTM76325, MTM76420, MTM76520
Keywords - MTM6N60 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: MTM6N90 | RD3P175SN
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