MTM6N60 Datasheet and Replacement
Type Designator: MTM6N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-204AA
MTM6N60 substitution
MTM6N60 Datasheet (PDF)
mtm6n90.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM6N90(MTM6N90) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power
Datasheet: MTM5N100 , MTM5N35 , MTM5N40 , MTM5N95 , MTM60N05 , MTM60N06 , MTM68410 , MTM68411 , IRFZ44N , MTM6N90 , MTM76110 , MTM76111 , MTM76123 , MTM76320 , MTM76325 , MTM76420 , MTM76520 .
History: HYG023N03LR1U | 18N20
Keywords - MTM6N60 MOSFET datasheet
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History: HYG023N03LR1U | 18N20



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