MTM76520
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTM76520
Marking Code: JA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.15
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 18
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105
Ohm
Package: WSMINI6-F1-B
MTM76520
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTM76520
Datasheet (PDF)
..1. Size:448K panasonic
mtm76520.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC).MTM76520Silicon N-channel MOS FETFor DC-DC converter circuitsFor switching circuits Overview Package CodeMTM76520 is the dual N-channel MOS FET that is highly suitable for DC-DC converter and other switching circuits. WSMini6-F1-B Pin Name 1: Source 1 4: Source 2 Features 2: Gate 1 5: Gate 2
9.1. Size:282K panasonic
mtm76420.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MTM76420Silicon P-channel MOS FETFor DC-DC converter circuitsFor switching circuits Overview PackageMTM76420 is the dual P-channel MOS FET that is highly suitable for DC- CodeDC converter and other switching circuits. WSMini6-F1-B Pin Name Features 1: Source 4: Source Dual P-channel MOS FET
9.2. Size:420K panasonic
mtm76111.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MTM76111Silicon P-channel MOS FETFor load switch circuits Overview Package MTM76111 is the low on-resistance P-channel MOS FET designed for load Codeswitch circuits. WSMini6-F1-B Pin Name Features 1: Drain 4: Source Low drain-source ON resistance: RDS(on) typ. = 26 mW (VGS = 4.5 V)
9.3. Size:279K panasonic
mtm76123.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MTM76123Silicon P-channel MOS FETFor load switch circuitsFor switching circuits Overview Package Code MTM76123 is the low on-resistance P-channel MOS FET designed for load switch circuits. WSMini6-F1-B Pin Name 1: Drain 4: Source Features 2: Drain 5: Drain Low drain-source ON resistance:
9.4. Size:437K panasonic
mtm76110.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MTM76110Silicon P-channel MOS FETFor load switch circuitsFor switching circuits Overview Package CodeMTM76110 is the low on resistance P-channel MOS FET designed for load switch circuits. WSMini6-F1-B Pin Name Features 1: Drain 4: Source 2: Drain 5: Drain Low drain-source ON resistance: RDS
9.5. Size:579K panasonic
mtm76320.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MTM76320Silicon N-channel MOS FET (FET1)Silicon P-channel MOS FET (FET2)For DC-DC converter circuitsFor switching circuits Overview PackageMTM76320 is the composite MOS FET (N-channel and P-channel MOS CodeFET) that is highly suitable for DC-DC converter and other switching circuits. WSMini6-F1-BPackage
9.6. Size:429K panasonic
mtm76325.pdf
Doc No. TT4-EA-13949Revision. 2Product StandardsMOS FETMTM763250LBFMTM763250LBFSilicon N-channel MOSFET (FET1)Unit : mm Silicon P-channel MOSFET (FET2)2.00.2 0.13For SwitchingFor DC-DC Converter6 5 4 FeaturesLow Drain-source On-state Resistance : RDS(on)typ. N-ch = 95 mVGS = 4.0 V) P-ch:300 m (VGS = -4.0 V)Halogen-free / RoHS compliant1
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