MTM76520 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MTM76520
Маркировка: JA
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.15 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 18 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.105 Ohm
Тип корпуса: WSMINI6-F1-B
MTM76520 Datasheet (PDF)
mtm76520.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MTM76520Silicon N-channel MOS FETFor DC-DC converter circuitsFor switching circuits Overview Package CodeMTM76520 is the dual N-channel MOS FET that is highly suitable for DC-DC converter and other switching circuits. WSMini6-F1-B Pin Name 1: Source 1 4: Source 2 Features 2: Gate 1 5: Gate 2
mtm76420.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MTM76420Silicon P-channel MOS FETFor DC-DC converter circuitsFor switching circuits Overview PackageMTM76420 is the dual P-channel MOS FET that is highly suitable for DC- CodeDC converter and other switching circuits. WSMini6-F1-B Pin Name Features 1: Source 4: Source Dual P-channel MOS FET
mtm76111.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MTM76111Silicon P-channel MOS FETFor load switch circuits Overview Package MTM76111 is the low on-resistance P-channel MOS FET designed for load Codeswitch circuits. WSMini6-F1-B Pin Name Features 1: Drain 4: Source Low drain-source ON resistance: RDS(on) typ. = 26 mW (VGS = 4.5 V)
mtm76123.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MTM76123Silicon P-channel MOS FETFor load switch circuitsFor switching circuits Overview Package Code MTM76123 is the low on-resistance P-channel MOS FET designed for load switch circuits. WSMini6-F1-B Pin Name 1: Drain 4: Source Features 2: Drain 5: Drain Low drain-source ON resistance:
mtm76110.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MTM76110Silicon P-channel MOS FETFor load switch circuitsFor switching circuits Overview Package CodeMTM76110 is the low on resistance P-channel MOS FET designed for load switch circuits. WSMini6-F1-B Pin Name Features 1: Drain 4: Source 2: Drain 5: Drain Low drain-source ON resistance: RDS
mtm76320.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MTM76320Silicon N-channel MOS FET (FET1)Silicon P-channel MOS FET (FET2)For DC-DC converter circuitsFor switching circuits Overview PackageMTM76320 is the composite MOS FET (N-channel and P-channel MOS CodeFET) that is highly suitable for DC-DC converter and other switching circuits. WSMini6-F1-BPackage
mtm76325.pdf
Doc No. TT4-EA-13949Revision. 2Product StandardsMOS FETMTM763250LBFMTM763250LBFSilicon N-channel MOSFET (FET1)Unit : mm Silicon P-channel MOSFET (FET2)2.00.2 0.13For SwitchingFor DC-DC Converter6 5 4 FeaturesLow Drain-source On-state Resistance : RDS(on)typ. N-ch = 95 mVGS = 4.0 V) P-ch:300 m (VGS = -4.0 V)Halogen-free / RoHS compliant1
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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