All MOSFET. MTM78E2B Datasheet

 

MTM78E2B Datasheet and Replacement


   Type Designator: MTM78E2B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 500 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: WSMINI8-F1-B
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MTM78E2B Datasheet (PDF)

 ..1. Size:517K  panasonic
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MTM78E2B

This product complies with the RoHS Directive (EU 2002/95/EC).Silicon MOS FETs (Small Signal) MTM78E2BDual N-channel MOS FETFor lithium-ion secondary battery protection circuit Overview PackageMTM78E2B is the MOS FET which is suitable for lithium ion secondary Codebattery protection circuit and features low on-resistance by the leading-edge fine WSMini8-F1-Bprocess a

 0.1. Size:355K  panasonic
 mtm78e2b0lbf.pdf pdf_icon

MTM78E2B

Doc No. TT4-EA-12408Revision. 2Product StandardsMOS FETMTM78E2B0LBFMTM78E2B0LBFGate Resistor installed Dual N-Channel MOS TypeUnit: mm 2.0For lithium-ion secondary battery protection circuit0.2 0.138 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ. = 21.5 m (VGS =4.0 V) Halogen-free / RoHS compliant1 2 3 4 (EU RoHS / UL-94 V-0 / MSL

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AP6679GI-HF | SPD04N60S5 | FCPF7N60YDTU | DM12N65C | SM6A12NSFP | H7N1002LM

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