MTM78E2B Datasheet and Replacement
Type Designator: MTM78E2B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 500 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: WSMINI8-F1-B
MTM78E2B substitution
MTM78E2B Datasheet (PDF)
mtm78e2b.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).Silicon MOS FETs (Small Signal) MTM78E2BDual N-channel MOS FETFor lithium-ion secondary battery protection circuit Overview PackageMTM78E2B is the MOS FET which is suitable for lithium ion secondary Codebattery protection circuit and features low on-resistance by the leading-edge fine WSMini8-F1-Bprocess a
mtm78e2b0lbf.pdf

Doc No. TT4-EA-12408Revision. 2Product StandardsMOS FETMTM78E2B0LBFMTM78E2B0LBFGate Resistor installed Dual N-Channel MOS TypeUnit: mm 2.0For lithium-ion secondary battery protection circuit0.2 0.138 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ. = 21.5 m (VGS =4.0 V) Halogen-free / RoHS compliant1 2 3 4 (EU RoHS / UL-94 V-0 / MSL
Datasheet: MTM6N90 , MTM76110 , MTM76111 , MTM76123 , MTM76320 , MTM76325 , MTM76420 , MTM76520 , IRFZ44 , MTM78E2B0LBF , MTM7N45 , MTM7N50 , MTM86124 , MTM86127 , MTM86128 , MTM86227 , MTM8N20 .
History: DM12N65C | HMS80N85D | 2N7221U | HAT2284H | NTMFS5C612NL | 2N7227U | GSM3454
Keywords - MTM78E2B MOSFET datasheet
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History: DM12N65C | HMS80N85D | 2N7221U | HAT2284H | NTMFS5C612NL | 2N7227U | GSM3454



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