MTN9N50FP MOSFET. Datasheet pdf. Equivalent
Type Designator: MTN9N50FP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 38.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 117 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-220FP
MTN9N50FP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTN9N50FP Datasheet (PDF)
mtn9n50fp.pdf
Spec. No. : C720FP Issued Date : 2009.10.01 CYStech Electronics Corp.Revised Date : 2014.11.06 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.78 typ. MTN9N50FP ID : 8.5A Description The MTN9N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on
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