All MOSFET. MTN9N50FP Datasheet

 

MTN9N50FP Datasheet and Replacement


   Type Designator: MTN9N50FP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 117 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220FP
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MTN9N50FP Datasheet (PDF)

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MTN9N50FP

Spec. No. : C720FP Issued Date : 2009.10.01 CYStech Electronics Corp.Revised Date : 2014.11.06 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.78 typ. MTN9N50FP ID : 8.5A Description The MTN9N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

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History: FHF4N65D | HLML6401 | IRFB4110Q | PMPB43XPE | TSM4925DCS | TDM3430 | AP85T03GH-HF

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