MTN9N50FP Specs and Replacement
Type Designator: MTN9N50FP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 117 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-220FP
MTN9N50FP substitution
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MTN9N50FP datasheet
mtn9n50fp.pdf
Spec. No. C720FP Issued Date 2009.10.01 CYStech Electronics Corp. Revised Date 2014.11.06 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 500V RDS(ON) 0.78 typ. MTN9N50FP ID 8.5A Description The MTN9N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on... See More ⇒
Detailed specifications: MTM982400BBF, MTMC8E2A, MTN12N30FP, MTN12N60BFP, MTN1N60L3, MTN2300AN3, MTN4N65F3, MTN8N65FI, 2N7002, MTP10N08, MTP10N10, MTP10N10E, MTP10N10ELG, MTP10N25, MTP10N35, MTP10N40, MTP10N40E
Keywords - MTN9N50FP MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AGMH18N20C | AGMH20P15D | STF34N65M5 | STF38N65M5 | IMW120R220M1H
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