All MOSFET. RFH10N45 Datasheet

 

RFH10N45 Datasheet and Replacement


   Type Designator: RFH10N45
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO218AC
 

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RFH10N45 Datasheet (PDF)

 ..1. Size:32K  harris semi
 rfh10n45 rfh10n50.pdf pdf_icon

RFH10N45

RFH10N45, RFH10N50SemiconductorData Sheet October 1998 File Number 1629.210A, 450V and 500V, 0.600 Ohm, FeaturesN-Channel Power MOSFETs 10A, 450V and 500V[ /TitleThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.600(RFH10power field effect transistors designed for applications such Related Literatureas switching regulators, switching converters, m

Datasheet: MTP10N10 , MTP10N10E , MTP10N10ELG , MTP10N25 , MTP10N35 , MTP10N40 , MTP10N40E , MTP12N08L , IRFB3607 , RFH10N50 , SMD15N05 , SMU15N05 , MTP12N10E , MTP12N10L , MTP12N18 , MTP12N20 , MTP12P05 .

History: STU7NF25 | FDBL86563F085 | 2N70K | SCT10N120 | WMJ26N60F2 | NTBG060N090SC1 | KTK919S

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