All MOSFET. MTP12N18 Datasheet

 

MTP12N18 Datasheet and Replacement


   Type Designator: MTP12N18
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 180 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO-220AB
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MTP12N18 Datasheet (PDF)

 ..1. Size:177K  1
 irf630 irf631 irf632 irf633 irf230 irf231 irf232 irf233 mtp12n18 mtp12n20.pdf pdf_icon

MTP12N18

 ..2. Size:101K  njs
 mtp12n18.pdf pdf_icon

MTP12N18

 0.1. Size:177K  fairchild semi
 irf630-6333 irf230-233 mtp12n18-20.pdf pdf_icon

MTP12N18

 7.1. Size:239K  motorola
 mtp12n10erev1a.pdf pdf_icon

MTP12N18

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12N10E/DDesigner's Data SheetMTP12N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high12 AMPERESenergy in the avalanche and commutation modes. The new energy100 VOLTSeffi

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: LSC65R280HT | IPB22N03S4L-15 | 2SK3700

Keywords - MTP12N18 MOSFET datasheet

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