MTP12N18 PDF and Equivalents Search

 

MTP12N18 Specs and Replacement

Type Designator: MTP12N18

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 180 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TO-220AB

MTP12N18 substitution

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MTP12N18 datasheet

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MTP12N18

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 ..2. Size:101K  njs
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MTP12N18

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 0.1. Size:177K  fairchild semi
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 7.1. Size:239K  motorola
 mtp12n10erev1a.pdf pdf_icon

MTP12N18

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP12N10E/D Designer's Data Sheet MTP12N10E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 12 AMPERES energy in the avalanche and commutation modes. The new energy 100 VOLTS effi... See More ⇒

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Detailed specifications: MTP10N40E, MTP12N08L, RFH10N45, RFH10N50, SMD15N05, SMU15N05, MTP12N10E, MTP12N10L, IRFB3607, MTP12N20, MTP12P05, MTP12P06, MTP12P08, MTP12P10, MTP12P10G, MTP15N05, MTP15N05E

Keywords - MTP12N18 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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