MTP12N20 PDF and Equivalents Search

 

MTP12N20 Specs and Replacement

Type Designator: MTP12N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TO-220AB

MTP12N20 substitution

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MTP12N20 datasheet

 ..2. Size:81K  njs
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MTP12N20

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 8.1. Size:239K  motorola
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MTP12N20

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP12N10E/D Designer's Data Sheet MTP12N10E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 12 AMPERES energy in the avalanche and commutation modes. The new energy 100 VOLTS effi... See More ⇒

 8.2. Size:222K  motorola
mtp12n06ez.pdf pdf_icon

MTP12N20

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP12N06EZL/D Designer's Data Sheet MTP12N06EZL TMOS E-FET. High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 12 AMPERES energy in the avalanche mode and switch efficiently. This new high 60 VOLTS energy device also offers a g... See More ⇒

Detailed specifications: MTP12N08L, RFH10N45, RFH10N50, SMD15N05, SMU15N05, MTP12N10E, MTP12N10L, MTP12N18, AON6380, MTP12P05, MTP12P06, MTP12P08, MTP12P10, MTP12P10G, MTP15N05, MTP15N05E, MTP15N06

Keywords - MTP12N20 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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