MTP12N20 Datasheet and Replacement
Type Designator: MTP12N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 250 nS
Cossⓘ - Output Capacitance: 400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO-220AB
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MTP12N20 Datasheet (PDF)
mtp12n10erev1a.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12N10E/DDesigner's Data SheetMTP12N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high12 AMPERESenergy in the avalanche and commutation modes. The new energy100 VOLTSeffi
mtp12n06ez.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12N06EZL/DDesigner's Data SheetMTP12N06EZLTMOS E-FET.High Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high12 AMPERESenergy in the avalanche mode and switch efficiently. This new high60 VOLTSenergy device also offers a g
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IPB22N03S4L-15 | 2SK3700 | LSC65R280HT
Keywords - MTP12N20 MOSFET datasheet
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History: IPB22N03S4L-15 | 2SK3700 | LSC65R280HT



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