MTP12N20 Specs and Replacement
Type Designator: MTP12N20
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO-220AB
MTP12N20 substitution
- MOSFET ⓘ Cross-Reference Search
MTP12N20 datasheet
irf630 irf631 irf632 irf633 irf230 irf231 irf232 irf233 mtp12n18 mtp12n20.pdf
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mtp12n10erev1a.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP12N10E/D Designer's Data Sheet MTP12N10E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 12 AMPERES energy in the avalanche and commutation modes. The new energy 100 VOLTS effi... See More ⇒
mtp12n06ez.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP12N06EZL/D Designer's Data Sheet MTP12N06EZL TMOS E-FET. High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 12 AMPERES energy in the avalanche mode and switch efficiently. This new high 60 VOLTS energy device also offers a g... See More ⇒
Detailed specifications: MTP12N08L, RFH10N45, RFH10N50, SMD15N05, SMU15N05, MTP12N10E, MTP12N10L, MTP12N18, AON6380, MTP12P05, MTP12P06, MTP12P08, MTP12P10, MTP12P10G, MTP15N05, MTP15N05E, MTP15N06
Keywords - MTP12N20 MOSFET specs
MTP12N20 cross reference
MTP12N20 equivalent finder
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MTP12N20 substitution
MTP12N20 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SMD15N05
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