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MTP15N05E Specs and Replacement

Type Designator: MTP15N05E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO-220AB

MTP15N05E substitution

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MTP15N05E datasheet

 ..1. Size:87K  njs
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MTP15N05E

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MTP15N05E

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MTP15N05E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP15N06VL/D Designer's Data Sheet MTP15N06VL TMOS V Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 15 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new technology more tha... See More ⇒

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Detailed specifications: MTP12N18, MTP12N20, MTP12P05, MTP12P06, MTP12P08, MTP12P10, MTP12P10G, MTP15N05, TK10A60D, MTP15N06, MTP1N100, MTP1N50, MTP1N50E, MTP1N55, MTP1N60, MTP1N60E, MTP1N80E

Keywords - MTP15N05E MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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