MTP1N100 MOSFET Datasheet: N-Ch, 1000V, 1A. Full specification with pinout and replacement list

MTP1N100 Specs and Replacement

Type Designator: MTP1N100

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Id| ⓘ - Maximum Drain Current: 1 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm

Package: TO-220AB

MTP1N100 substitution

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MTP1N100 datasheet

..1. Size:56K motorola
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N100E/D Designer's Data Sheet MTP1N100E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage blocking capability without 1000 VOLTS de... See More ⇒

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N50E/D Designer's Data Sheet MTP1N50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degra... See More ⇒