MTP1N55 MOSFET Datasheet: N-Ch, 550V, 1A. Full specification with pinout and replacement list

MTP1N55 Specs and Replacement

Type Designator: MTP1N55

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Id| ⓘ - Maximum Drain Current: 1 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm

Package: TO-220AB

MTP1N55 substitution

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MTP1N55 datasheet

..1. Size:56K motorola
mtp1n100 mtp1n55 mtp1n95 mtp20p06 mtp2955 mtp2n55 mtp2n60 mtp2n85 mtp2p45 mtp2p50 mtp3n100 mtp3n75 mtp3n80 mtp3n95 mtp3p25 mtp4n85.pdf pdf_icon

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8.1. Size:159K motorola
mtp1n50erev1x.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N50E/D Designer's Data Sheet MTP1N50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degra... See More ⇒

8.2. Size:112K motorola
mtp1n50e.pdf pdf_icon

8.3. Size:25K no
mtp1n50.pdf pdf_icon

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE MTP1N50 PH (561) 283-4500 FAX (561) 286-8914 Website http //www.semi-tech-inc.com CASE OUTLINE TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING Drain Source Voltage VDSS 500 Vdc Drain Gate Voltage VDGR 500 Vdc Drain Current Continuous ID 1.... See More ⇒

Detailed specifications: MTP12P10, MTP12P10G, MTP15N05, MTP15N05E, MTP15N06, MTP1N100, MTP1N50, MTP1N50E, IRF1407, MTP1N60, MTP1N60E, MTP1N80E, MTP1N95, MTP20N10E, MTP20N15EG, MTP20N20E, MTP20P06