All MOSFET. MTP1N55 Datasheet

 

MTP1N55 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTP1N55
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
   Package: TO-220AB

 MTP1N55 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTP1N55 Datasheet (PDF)

 8.1. Size:159K  motorola
mtp1n50erev1x.pdf

MTP1N55
MTP1N55

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N50E/DDesigner's Data SheetMTP1N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegra

 8.2. Size:112K  motorola
mtp1n50e.pdf

MTP1N55
MTP1N55

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N50E/DDesigner's Data SheetMTP1N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegra

 8.3. Size:25K  no
mtp1n50.pdf

MTP1N55
MTP1N55

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MTP1N50 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain Source Voltage VDSS 500 Vdc Drain Gate Voltage VDGR 500 Vdc Drain Current Continuous ID 1.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: MTP20N10E | IRF3305 | APT12067B2LLG | 2SK3430-Z | APT12080LVFRG

 

 
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