MTP20N10E Specs and Replacement
Type Designator: MTP20N10E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 450 nS
Cossⓘ - Output Capacitance: 600 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO-220AB
MTP20N10E substitution
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MTP20N10E datasheet
mtp20n15e-d.pdf
MTP20N15E Power MOSFET 20 Amps, 150 Volts N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power converters 20 AMPERES and PWM motor controls, these dev... See More ⇒
mtp20n15eg.pdf
MTP20N15E Power MOSFET 20 Amps, 150 Volts N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power converters 20 AMPERES and PWM motor controls, these dev... See More ⇒
mtp20n06v.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP20N06V/D Designer's Data Sheet MTP20N06V TMOS V Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 20 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new technology more than ... See More ⇒
Detailed specifications: MTP1N100, MTP1N50, MTP1N50E, MTP1N55, MTP1N60, MTP1N60E, MTP1N80E, MTP1N95, SI2302, MTP20N15EG, MTP20N20E, MTP20P06, MTP23P06V, MTP23P06VG, MTP25N05E, MTP2955, MTP2955V
Keywords - MTP20N10E MOSFET specs
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