Справочник MOSFET. MTP20N10E

 

MTP20N10E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MTP20N10E
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 100 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4.5 V
   Максимально допустимый постоянный ток стока |Id|: 20 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 28 nC
   Время нарастания (tr): 450 ns
   Выходная емкость (Cd): 600 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.15 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для MTP20N10E

 

 

MTP20N10E Datasheet (PDF)

 ..1. Size:95K  njs
 mtp20n10e.pdf

MTP20N10E MTP20N10E

 7.1. Size:113K  onsemi
 mtp20n15e-d.pdf

MTP20N10E MTP20N10E

MTP20N15EPower MOSFET20 Amps, 150 VoltsN-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power converters20 AMPERESand PWM motor controls, these dev

 7.2. Size:110K  onsemi
 mtp20n15eg.pdf

MTP20N10E MTP20N10E

MTP20N15EPower MOSFET20 Amps, 150 VoltsN-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power converters20 AMPERESand PWM motor controls, these dev

 8.1. Size:209K  motorola
 mtp20n06v.pdf

MTP20N10E MTP20N10E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP20N06V/DDesigner's Data SheetMTP20N06VTMOS VPower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-20 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than

 8.2. Size:120K  motorola
 mtp20n20e.pdf

MTP20N10E MTP20N10E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP20N20E/DDesigner's Data SheetMTP20N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high20 AMPERESenergy in the avalanche and commutation modes. The new energy200 VOLTSeffi

 8.3. Size:203K  motorola
 mtp20n20erev2x.pdf

MTP20N10E MTP20N10E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP20N20E/DDesigner's Data SheetMTP20N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high20 AMPERESenergy in the avalanche and commutation modes. The new energy200 VOLTSeffi

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top