MTP2N20 Datasheet and Replacement
Type Designator: MTP2N20
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id| ⓘ - Maximum Drain Current: 3.25
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Qg ⓘ - Total Gate Charge: 7.5
nC
tr ⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 80
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8
Ohm
Package:
TO-220AB
-
MOSFET ⓘ Cross-Reference Search
MTP2N20 Datasheet (PDF)
8.1. Size:238K motorola
mtp2n2222a p2n2222a.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby P2N2222A/DAmplifier TransistorsNPN SiliconP2N2222ACOLLECTOR12BASE3EMITTERMAXIMUM RATINGSRating Symbol Value Unit12CollectorEmitter Voltage VCEO 40 Vdc 3CollectorBase Voltage VCBO 75 VdcCASE 2904, STYLE 17EmitterBase Voltage VEBO 6.0 VdcTO92 (TO226AA)Collector Current Conti
8.2. Size:240K motorola
mtp2n2907a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby P2N2907A/DAmplifier TransistorPNP SiliconP2N2907ACOLLECTOR12BASE3EMITTERMAXIMUM RATINGSRating Symbol Value Unit12CollectorEmitter Voltage VCEO 60 Vdc 3CollectorBase Voltage VCBO 60 VdcCASE 2904, STYLE 17EmitterBase Voltage VEBO 5.0 VdcTO92 (TO226AA)Collector Current
9.1. Size:217K motorola
mtp2n40erev0bx.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N40E/DDesigner's Data SheetMTP2N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without400 VOLTSdegra
9.2. Size:244K motorola
mtp2n50e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N50E/DDesigner's Data SheetMTP2N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegra
9.3. Size:190K motorola
mtp2n60e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N60E/DDesigner's Data SheetMTP2N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without600 VOLTSdegra
9.4. Size:219K motorola
mtp2n60erev2a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N60E/DDesigner's Data SheetMTP2N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without600 VOLTSdegra
9.6. Size:140K motorola
mtp2n40e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N40E/DDesigner's Data SheetMTP2N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without400 VOLTSdegra
9.12. Size:26K no
mtp2n50e.pdf
PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MTP2N50E PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain Source Voltage VDSS 500 Vdc Drain Gate Voltage VDGR 500 Vdc Drain Current Continuous ID 2
9.13. Size:204K inchange semiconductor
mtp2n50.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MTP2N50FEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gate-S
Datasheet: MTP20N20E
, MTP20P06
, MTP23P06V
, MTP23P06VG
, MTP25N05E
, MTP2955
, MTP2955V
, MTP2N18
, AO3401
, MTP2N35
, MTP2N40
, MTP2N40E
, MTP2N45
, MTP2N50E
, MTP2N55
, MTP2N60
, MTP2N60E
.
History: 2N7261U
| VP0106
Keywords - MTP2N20 MOSFET datasheet
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