All MOSFET. MTP2N20 Datasheet

 

MTP2N20 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTP2N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 3.25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.5 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO-220AB

 MTP2N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTP2N20 Datasheet (PDF)

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