MTP2N40 Datasheet and Replacement
Type Designator: MTP2N40
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO-220AB
MTP2N40 substitution
MTP2N40 Datasheet (PDF)
mtp2n40erev0bx.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N40E/DDesigner's Data SheetMTP2N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without400 VOLTSdegra
mtp2n40e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N40E/DDesigner's Data SheetMTP2N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without400 VOLTSdegra
Datasheet: MTP23P06V , MTP23P06VG , MTP25N05E , MTP2955 , MTP2955V , MTP2N18 , MTP2N20 , MTP2N35 , RU6888R , MTP2N40E , MTP2N45 , MTP2N50E , MTP2N55 , MTP2N60 , MTP2N60E , MTP2N80 , MTP2N85 .
Keywords - MTP2N40 MOSFET datasheet
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