All MOSFET. MTP2N80 Datasheet

 

MTP2N80 Datasheet and Replacement


   Type Designator: MTP2N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO-220AB
 

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MTP2N80 Datasheet (PDF)

 ..1. Size:93K  njs
 mtp2n80.pdf pdf_icon

MTP2N80

 8.1. Size:56K  motorola
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MTP2N80

 9.1. Size:107K  1
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MTP2N80

 9.2. Size:217K  motorola
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MTP2N80

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N40E/DDesigner's Data SheetMTP2N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without400 VOLTSdegra

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Datasheet: MTP2N35 , MTP2N40 , MTP2N40E , MTP2N45 , MTP2N50E , MTP2N55 , MTP2N60 , MTP2N60E , IRF1405 , MTP2N85 , MTP2N90 , MTP2P45 , MTP2P50 , MTP2P50EG , MTP3055V , MTP30P06V , MTP36N06V .

History: APT10M19BVFRG | IRFU3504Z

Keywords - MTP2N80 MOSFET datasheet

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