Справочник MOSFET. MTP2N80

 

MTP2N80 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MTP2N80
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 33 nC
   trⓘ - Время нарастания: 150 ns
   Cossⓘ - Выходная емкость: 300 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 8 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для MTP2N80

 

 

MTP2N80 Datasheet (PDF)

 ..1. Size:93K  njs
 mtp2n80.pdf

MTP2N80 MTP2N80

 8.1. Size:56K  motorola
 mtp1n100 mtp1n55 mtp1n95 mtp20p06 mtp2955 mtp2n55 mtp2n60 mtp2n85 mtp2p45 mtp2p50 mtp3n100 mtp3n75 mtp3n80 mtp3n95 mtp3p25 mtp4n85.pdf

MTP2N80

 9.1. Size:107K  1
 irf610 irf611 irf612 irf613 mtp2n18 mtp2n20.pdf

MTP2N80 MTP2N80

 9.2. Size:217K  motorola
 mtp2n40erev0bx.pdf

MTP2N80 MTP2N80

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N40E/DDesigner's Data SheetMTP2N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without400 VOLTSdegra

 9.3. Size:244K  motorola
 mtp2n50e.pdf

MTP2N80 MTP2N80

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N50E/DDesigner's Data SheetMTP2N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegra

 9.4. Size:190K  motorola
 mtp2n60e.pdf

MTP2N80 MTP2N80

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N60E/DDesigner's Data SheetMTP2N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without600 VOLTSdegra

 9.5. Size:238K  motorola
 mtp2n2222a p2n2222a.pdf

MTP2N80 MTP2N80

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby P2N2222A/DAmplifier TransistorsNPN SiliconP2N2222ACOLLECTOR12BASE3EMITTERMAXIMUM RATINGSRating Symbol Value Unit12CollectorEmitter Voltage VCEO 40 Vdc 3CollectorBase Voltage VCBO 75 VdcCASE 2904, STYLE 17EmitterBase Voltage VEBO 6.0 VdcTO92 (TO226AA)Collector Current Conti

 9.6. Size:219K  motorola
 mtp2n60erev2a.pdf

MTP2N80 MTP2N80

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N60E/DDesigner's Data SheetMTP2N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without600 VOLTSdegra

 9.7. Size:240K  motorola
 mtp2n2907a.pdf

MTP2N80 MTP2N80

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby P2N2907A/DAmplifier TransistorPNP SiliconP2N2907ACOLLECTOR12BASE3EMITTERMAXIMUM RATINGSRating Symbol Value Unit12CollectorEmitter Voltage VCEO 60 Vdc 3CollectorBase Voltage VCBO 60 VdcCASE 2904, STYLE 17EmitterBase Voltage VEBO 5.0 VdcTO92 (TO226AA)Collector Current

 9.8. Size:140K  motorola
 mtp2n40e.pdf

MTP2N80 MTP2N80

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N40E/DDesigner's Data SheetMTP2N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without400 VOLTSdegra

 9.9. Size:157K  fairchild semi
 mtp2n45.pdf

MTP2N80 MTP2N80

 9.10. Size:106K  njs
 mtp2n60e.pdf

MTP2N80 MTP2N80

 9.11. Size:107K  njs
 mtp2n18 mtp2n20.pdf

MTP2N80 MTP2N80

 9.12. Size:95K  njs
 mtm2n85 mtm2n90 mtp2n90.pdf

MTP2N80 MTP2N80

 9.13. Size:786K  njs
 mtp2n35 mtp2n40.pdf

MTP2N80 MTP2N80

 9.14. Size:26K  no
 mtp2n50e.pdf

MTP2N80 MTP2N80

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MTP2N50E PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain Source Voltage VDSS 500 Vdc Drain Gate Voltage VDGR 500 Vdc Drain Current Continuous ID 2

 9.15. Size:204K  inchange semiconductor
 mtp2n50.pdf

MTP2N80 MTP2N80

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MTP2N50FEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gate-S

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SSS5N90A

 

 
Back to Top