MTP2N85 Specs and Replacement
Type Designator: MTP2N85
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 850 V
|Id| ⓘ - Maximum Drain Current: 2 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: TO-220AB
- MOSFET ⓘ Cross-Reference Search
MTP2N85 datasheet
9.2. Size:217K motorola
mtp2n40erev0bx.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2N40E/D Designer's Data Sheet MTP2N40E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltage blocking capability without 400 VOLTS degra... See More ⇒
9.3. Size:244K motorola
mtp2n50e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2N50E/D Designer's Data Sheet MTP2N50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degra... See More ⇒
9.4. Size:190K motorola
mtp2n60e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2N60E/D Designer's Data Sheet MTP2N60E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltage blocking capability without 600 VOLTS degra... See More ⇒
9.5. Size:238K motorola
mtp2n2222a p2n2222a.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector Emitter Voltage VCEO 40 Vdc 3 Collector Base Voltage VCBO 75 Vdc CASE 29 04, STYLE 17 Emitter Base Voltage VEBO 6.0 Vdc TO 92 (TO 226AA) Collector Current Conti... See More ⇒
9.6. Size:219K motorola
mtp2n60erev2a.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2N60E/D Designer's Data Sheet MTP2N60E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltage blocking capability without 600 VOLTS degra... See More ⇒
9.8. Size:140K motorola
mtp2n40e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2N40E/D Designer's Data Sheet MTP2N40E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltage blocking capability without 400 VOLTS degra... See More ⇒
9.14. Size:26K no
mtp2n50e.pdf
PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE MTP2N50E PH (561) 283-4500 FAX (561) 286-8914 Website http //www.semi-tech-inc.com CASE OUTLINE TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING Drain Source Voltage VDSS 500 Vdc Drain Gate Voltage VDGR 500 Vdc Drain Current Continuous ID 2... See More ⇒
9.15. Size:204K inchange semiconductor
mtp2n50.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MTP2N50 FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate-S... See More ⇒
Detailed specifications: MTP2N40, MTP2N40E, MTP2N45, MTP2N50E, MTP2N55, MTP2N60, MTP2N60E, MTP2N80, IRLB3034, MTP2N90, MTP2P45, MTP2P50, MTP2P50EG, MTP3055V, MTP30P06V, MTP36N06V, MTP3N100
Keywords - MTP2N85 MOSFET specs
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